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Advance Technical Information
Trench Gate
Power MOSFET
IXTQ 160N085T
IXTA 160N085T
IXTP 160N085T
V DSS
I D25
R DS(on)
= 85 V
= 160 A
= 6.0 m ?
N-Channel Enhancement Mode
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
85
85
V
V
G
D
S
(TAB)
V GSM
I D25
I DRMS
I DM
T C = 25 ° C
External lead current limit
T C = 25 ° C, pulse width limited by T JM
± 20
160
75
350
V
A
A
A
TO-220 (IXTP)
I AR
E AS
T C = 25 ° C
T C = 25 ° C
75
1.0
A
J
G
D S
(TAB)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
3
V/ns
TO-263 (IXTA)
T J ≤ 150 ° C, R G = 10 ?
P D
T C = 25 ° C
360
W
T J
T JM
T stg
-55 ... +175
175
-55 ... +150
° C
° C
° C
G
S
(TAB)
T L
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
300
260
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
TO-263 package for 10s
M d
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
Features
Weight
TO-3P
TO-220
TO-263
5.5
4
3
g
g
g
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
V DSS V GS = 0 V, I D = 250 μ A
Min. Typ. Max.
85
V
Advantages
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 1 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125 ° C
2.0
4.0
± 200
25
250
V
nA
μ A
μ A
Easy to mount
Space savings
High power density
R DS(on)
V GS = 10 V, I D = 50 A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
5.0
6.0
m ?
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DS99347(02/05)
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